View NCP4515SN285T1_2867368.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2001 february, 2001 rev. 0 1 publication order number: ncp4515/d ncp4515 100 ma cmos ldo with shutdown and reference bypass the ncp4515 is a high accuracy (typically 0.5%) cmos upgrade for older (bipolar) low dropout regulators such as the lp2980. designed specifically for batteryoperated systems, the devices' cmos construction eliminates wasted ground current, significantly extending battery life. total supply current is typically 50 m a at full load (20 to 60 times lower than in bipolar regulators). key features for the devices include ultra lownoise operation (plus optional bypass input), fast response to step changes in load, and very low dropout voltage, typically 180 mv at full load. supply current is reduced to 0.5 m a (max) and v out falls to zero when the shutdown input is low. the devices also incorporate both overtemperature and overcurrent protection. the ncp4515 is stable with an output capacitor of only 1.0 m f and has a maximum output current of 50 ma, 100 ma, and 150 ma, respectively. for higher output versions, see the ncp4569 (i out = 300 ma) data sheet. features ? extremely low supply current (50 m a, typ.) ? very low dropout voltage ? guaranteed 100 ma output ? high output voltage accuracy ? standard or custom output voltages ? powersaving shutdown mode ? reference bypass input for ultra lownoise operation ? overcurrent and overtemperature protection ? spacesaving 5pin sot23a package ? pin compatible upgrades for bipolar regulators applications ? batteryoperated systems ? portable computers ? medical instruments ? instrumentation ? cellular/gsm/phs phones ? linear postregulator for smps ? pagers http://onsemi.com sot23 sn suffix case 1212 1 pin connections 2 3 4 5 see detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet. ordering information see general marking information in the device marking section on page 14 of this data sheet. device marking information 5 1 2 4 3 v in bypass gnd shdn v out (top view)
ncp4515 http://onsemi.com 2 figure 1. typical application 1 2 5 4 v out gnd bypass v in + 470 pf reference bypass cap (optional) v out shutdown control (from power control logic) 1 m f 3 shdn v in absolute maximum ratings* rating symbol value unit input voltage 6.5 v output voltage 0.3 to v in + 0.3 v power dissipation internally limited operating temperature t a 40 t j 125 c storage temperature t stg 65 to +150 c maximum voltage on any pin v in + 0.3 to 0.3 v lead temperature (soldering, 10 sec.) +260 c esd withstand voltage human body model (note 1.) v esd 2000 v latchup performance (note 2.) positive negative i latchup 250 250 ma *stresses beyond those listed under aabsolute maximum ratings'' may cause permanent damage to the device. these are stress rati ngs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of t he specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1. tested to eia/jesd22a114a 2. tested to eia/jesd78
ncp4515 http://onsemi.com 3 electrical characteristics (v in = v r + 1.0 v, i l = 100 m a, c l = 3.3 m f, shdn v ih , t a = 25 c, unless otherwise noted. boldface type specifications apply for junction temperatures of 40 c to +125 c.) characteristics test conditions symbol min typ max unit input operating voltage note 3. v in 2.7 6.0 v maximum output current i outmax 100 ma output voltage note 4. v out v r 2.5% v r 0.5% v r + 2.5% v v out temperature coefficient note 5. tcv out 20 40 ppm/ c line regulation (v r + 1.0 v) v in 6.0 v v out / v in 0.05 0.35 % load regulation i l = 0.1 ma to i outmax note 6. v out /v out 0.5 2.0 % dropout voltage i l = 100 m a i l = 20 ma i l = 50 ma i l = 100 ma note 7. v in v out 2.0 65 85 180 120 250 mv supply current (note 10.) shdn = v ih , i l = 0 i in 50 80 m a shutdown supply current shdn = 0 v i insd 0.05 0.5 m a power supply rejection ratio f re 1.0 khz psrr 64 db output short circuit current v out = 0 v i outsc 300 450 ma thermal regulation note 8., 9. v out / p d 0.04 v/w thermal shutdown die temperature t sd 160 c thermal shutdown hysteresis t sd 10 c output noise i l = i outmax , f = 10 khz 470 pf from bypass to gnd en 600 nv
hz shdn input shdn input high threshold v in = 2.5 v to 6.5 v v ih 45 %v in shdn input low threshold v in = 2.5 v to 6.5 v v il 15 %v in 3. the minimum v in has to meet two conditions: v in 2.7 v and v in v r + v dropout . 4. v r is the regulator output voltage setting. for example: v r = 1.8 v, 2.5 v, 2.7 v, 2.8 v, 2.85 v, 3.0 v, 3.3 v, 3.6 v, 4.0 v, 5.0 v. 5. t c v out = 6. regulation is measured at a constant junction temperature using low duty cycle pulse testing. load regulation is tested over a load range from 1.0 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the therma l regulation specification. 7. dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value a t a 1.0 v differential. 8. thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, exc luding load or line regulation effects. specifications are for a current pulse equal to i lmax at v in = 6.0 v for t = 10 msec. 9. the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junctiontoair (i.e. t a , t j , ja ). exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. please see thermal considerations section of this data sheet for more details. 10. apply for junction temperatures of 40 c to +85 c. (v outmax v outmin ) 10 6 v out t
ncp4515 http://onsemi.com 4 pin description pin number symbol description 1 v in unregulated supply input. 2 gnd ground terminal. 3 shdn shutdown control input. the regulator is fully enabled when a logic high is applied to this input. the regulator enters shutdown when a logic low is applied to this input. during shutdown, output voltage falls to zero, and supply current is reduced to 0.5 m a (max). 4 bypass reference bypass input. connecting a 470 pf to this input further reduces output noise. 5 v out regulated voltage output. detailed description the ncp4515 is a precision fixed output voltage regulator. unlike bipolar regulators, the ncp4515 supply current does not increase with load current. in addition, v out remains stable and within regulation at very low load currents (an important consideration in rtc and cmos ram battery backup applications). figure 2 shows a typical application circuit. the regulator is enabled any time the shutdown input (shdn ) is at or above v ih , and shutdown (disabled) when shdn is at or below v il . shdn may be controlled by a cmos logic gate, or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, supply current decreases to 0.05 m a (typical) and v out falls to zero volts. figure 2. typical application circuit v out v out gnd bypass v in + 470 pf reference bypass cap (optional) 1 m f shdn ncp4515 shutdown control (to cmos logic or tie to v in if unused) + 1 m f + battery bypass input a 470 pf capacitor connected from the bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. if output noise is not a concern, this input may be left unconnected. larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. output capacitor a 1.0 m f (min) capacitor from v out to ground is required. the output capacitor should have an effective series resistance of 5.0 w or less. a 1.0 m f capacitor should be connected from v in to gnd if there is more than 10 inches of wire between the regulator and the ac filter capacitor, or if a battery is used as the power source. aluminum electrolytic or tantalum capacitor types can be used. (since many aluminum electrolytic capacitors freeze at approximately 30 c, solid tantalums are recommended for applications operating below 25 c.) when operating from sources other than batteries, supplynoise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. thermal considerations thermal shutdown integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160 c. the regulator remains off until the die temperature drops to approximately 150 c.
ncp4515 http://onsemi.com 5 power dissipation the amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. the following equation is used to calculate worst case actual power dissipation: p d (v inmax v outmin )i loadmax p d worst case actual power dissipation where : v inmax maximum voltage on v in v outmin minimum regulator output voltage i loadmax maximum output (load) current (eq. 1) the maximum allowable power dissipation (equation 2) is a function of the maximum ambient temperature (t amax ), the maximum allowable die temperature (125 c), and the thermal resistance from junctiontoair ( ja ). the 5pin sot23 package has a ja of approximately 200 c/watt when mounted on a single layer fr4 dielectric copper clad pc board. p dmax (t jmax t amax ) ja where all terms are previously defined. (eq. 2) equation 1 can be used in conjunction with equation 2 to ensure regulator thermal operation is within limits. for example: v inmax 3.0 v 10% given : v outmin 2.7 v 2.5% i loadmax 40 ma t jmax 125 c t amax 55 c find : 1. actual power dissipation. 2. maximum allowable dissipation. p d (v inmax v outmin )i loadmax actual power dissipation : [ (3.0 1.1) (2.7 .975) ] 40 10 3 26.7 mw p dmax (t jmax t amax ) ja maximum allowable power dissipation : (125 55) 318 mw 220 in this example, the ncp4515 dissipates a maximum of only 26.7 mw; far below the allowable limit of 318 mw. in a similar manner, equation 1 and equation 2 can be used to calculate maximum current and/or input voltage limits. layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower ja and, therefore, increase the maximum allowable power dissipation limit.
ncp4515 http://onsemi.com 6 typical characteristics (unless otherwise specified, all parts are measured at temperature = 25 c) 90 80 60 70 40 20 0 0.080 0.060 0.090 0.050 0.070 0.000 0.100 0.150 40 0.016 20 0.010 0 20 dropout voltage (v) 0.000 temperature ( c) figure 3. dropout voltage vs. temperature (v out = 3.3 v) figure 4. dropout voltage vs. temperature (v out = 3.3 v) dropout voltage (v) 0.200 0.180 0.160 0.140 0.120 0.100 0.080 0.060 0.000 figure 5. dropout voltage vs. temperature (v out = 3.3 v) temperature ( c) figure 6. dropout voltage vs. temperature (v out = 3.3 v) temperature ( c) dropout voltage (v) dropout voltage (v) figure 7. ground current vs. v in (v out = 3.3 v) v in , (v) figure 8. ground current vs. v in (v out = 3.3 v) v in , (v) gnd current ( m a) gnd current ( m a) 0.020 02 1.5 1 0.5 2.5 3 0.050 0.200 0.100 0.000 0.250 0.300 i load = 100 ma c in = 1 m f c out = 1 m f temperature ( c) 0.006 0.008 0.012 0.014 0.018 50 70 0.040 0.004 0.002 125 0.030 0.020 0.010 40 20 0 20 50 70 125 40 20 0 20 50 70 125 0.040 0.020 40 20 0 20 50 70 125 50 30 10 90 80 60 70 40 20 0 50 30 10 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 2 1.5 1 0.5 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 i load = 10 ma c in = 1 m f c out = 1 m f i load = 100 ma c in = 1 m f c out = 1 m f i load = 150 ma c in = 1 m f c out = 1 m f i load = 50 ma c in = 1 m f c out = 1 m f i load = 10 ma c in = 1 m f c out = 1 m f
ncp4515 http://onsemi.com 7 typical characteristics (unless otherwise specified, all parts are measured at temperature = 25 c) 2.5 3.290 3.288 3.284 3.286 3.282 3.280 3.274 4.995 4.985 5.000 4.990 5.005 5.010 5.015 5.020 5.025 2.5 1 3 0.5 1.5 0 3.5 3.305 60 30 gnd current ( m a) 0 v in , (v) figure 9. ground current vs. v in (v out = 3.3 v) figure 10. v out vs. v in (v out = 3.3 v) v out (v) figure 11. v out vs. v in (v out = 3.3 v) v in , (v) figure 12. output voltage vs. temperature (v out = 3.3 v) temperature ( c) v out (v) v out (v) figure 13. output voltage vs. temperature (v out = 3.3 v) temperature ( c) figure 14. output voltage vs. temperature (v out = 5 v) temperature ( c) v out (v) v out (v) 80 3.295 3.310 3.290 3.300 3.275 3.315 3.320 v in , (v) 10 20 40 50 70 02 1.5 1 0.5 2.5 3 40 20 10 20 40 125 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 2 1.5 1 0.5 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 02 1.5 1 0.5 3 3.5 4 4.5 5 5.5 6 6.5 7 85 0 2 2.5 1.0 3.0 0.5 1.5 0.0 3.5 2.0 3.285 3.280 40 20 10 20 40 125 85 0 3.278 3.276 i load = 150 ma c in = 1 m f c out = 1 m f i load = 0 ma c in = 1 m f c out = 1 m f i load = 100 ma c in = 1 m f c out = 1 m f i load = 10 ma c in = 1 m f c out = 1 m f v in = 4.3 v i load = 150 ma c in = 1 m f c out = 1 m f v in = 4.3 v i load = 10 ma c in = 1 m f c out = 1 m f v in = 6 v 40 20 10 20 40 125 85 0
ncp4515 http://onsemi.com 8 typical characteristics (unless otherwise specified, all parts are measured at temperature = 25 c) 1000 100 1 10 0.1 0.01 60 70 55 75 65 80 50 45 40 35 30 v out (v) temperature ( c) figure 15. output voltage vs. temperature (v out = 5 v) figure 16. temperature vs. quiescent current (v out = 5 v) gnd current ( m a) 80 70 60 50 40 30 20 10 0 figure 17. temperature vs. quiescent current (v out = 5 v) temperature ( c) figure 18. output noise vs. frequency frequency (hz) noise ( m v/ hz) gnd current ( m a) figure 19. stability region vs. load current load current (ma) figure 20. power supply rejection ratio frequency (hz) c out , esr ( w ) psrr (db) 4.994 040 30 20 10 50 60 0.01 k 100 k 10 k 1 k 1000 k 0.1 k 0.1 1.0 0.0 10.0 temperature ( c) 4.974 4.992 4.990 4.988 4.986 4.984 4.982 4.980 4.978 4.976 70 60 50 40 30 20 10 0 40 20 10 20 40 125 85 0 40 20 10 20 40 125 85 0 40 20 10 20 40 125 85 0 0.01 k 100 k 10 k 1 k 1000 k 0.1 k 70 80 90 100 i load = 150 ma c in = 1 m f c out = 1 m f v in = 6 v i load = 10 ma c in = 1 m f c out = 1 m f v in = 6 v i load = 150 ma c in = 1 m f c out = 1 m f v in = 6 v r load = 50 w c in = 1 m f c out = 1 m f c byp = 0 c out = 1 m f to 10 m f i out = 10 ma v indc = 4 v v inac = 100 mv pp v out = 3 v c in = 0 c out = 1 m f stable region
ncp4515 http://onsemi.com 9 figure 21. measure rise time of 3.3 v ldo with bypass capacitor conditions: c in = 1 m f, c out = 1 m f, c byp = 470 pf i load = 100 ma, v in = 4.3 v, temp = 25 c rise time = 448 m s figure 22. measure rise time of 3.3 v ldo without bypass capacitor conditions: c in = 1 m f, c out = 1 m f, c byp = 0 pf i load = 100 ma, v in = 4.3 v, temp = 25 c rise time = 184 m s figure 23. measure fall time of 3.3 v ldo with bypass capacitor figure 24. measure fall time of 3.3 v ldo without bypass capacitor conditions: c in = 1 m f, c out = 1 m f, c byp = 470 pf i load = 50 ma, v in = 4.3 v, temp = 25 c fall time = 100 m s conditions: c in = 1 m f, c out = 1 m f, c byp = 0 pf i load = 100 ma, v in = 4.3 v, temp = 25 c fall time = 52 m s
ncp4515 http://onsemi.com 10 figure 25. measure rise time of 5.0 v ldo with bypass capacitor conditions: c in = 1 m f, c out = 1 m f, c byp = 470 pf i load = 100 ma, v in = 6 v, temp = 25 c rise time = 390 m s figure 26. measure rise time of 5.0 v ldo without bypass capacitor conditions: c in = 1 m f, c out = 1 m f, c byp = 0 pf i load = 100 ma, v in = 6 v, temp = 25 c rise time = 192 m s figure 27. measure fall time of 5.0 v ldo with bypass capacitor figure 28. measure fall time of 5.0 v ldo without bypass capacitor conditions: c in = 1 m f, c out = 1 m f, c byp = 470 pf i load = 50 ma, v in = 6 v, temp = 25 c fall time = 167 m s conditions: c in = 1 m f, c out = 1 m f, c byp = 0 pf i load = 100 ma, v in = 6 v, temp = 25 c fall time = 88 m s
ncp4515 http://onsemi.com 11 figure 29. load regulation of 3.3 v ldo conditions: c in = 1 m f, c out = 2.2 m f, c byp = 470 pf v in = v out + 0.25 v, temp = 25 c figure 30. load regulation of 3.3 v ldo figure 31. load regulation of 3.3 v ldo figure 32. line regulation of 3.3 v ldo conditions: c in = 1 m f, c out = 2.2 m f, c byp = 470 pf v in = v out + 0.25 v, temp = 25 c conditions: c in = 1 m f, c out = 2.2 m f, c byp = 470 pf v in = v out + 0.25 v, temp = 25 c conditions: v in = 4 v, + 1 v squarewave @ 2.5 khz
ncp4515 http://onsemi.com 12 figure 33. line regulation of 5.0 v ldo conditions: v in = 6 v, + 1 v squarewave @ 2.5 khz figure 34. thermal shutdown response of 5.0 v ldo conditions: v in = 6 v, c in = 0 m f, c out = 1 m f i load was increased until temperrature of die reached about 160 c, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approxi- mately 160 c. the regulator remains off until die temperature drops to approximately 150 c
ncp4515 http://onsemi.com 13 w device marking device marking pin 1 user direction of feed component taping orientation for 5pin sot23 devices standard reel component orientation tr suffix device (mark right side up) sot23 package carrier width (w) pitch (p) part per full reel reel size 8 mm 4 mm 3000 7 inches carrier tape, number of components per reel and reel size reverse reel component orientation rt suffix device (mark upside down) pin 1 user direction of feed p
ncp4515 http://onsemi.com 14 and = two letter part number codes + temperature range and voltage = date code = lot id number marking diagram 12 3 4 12 3 4 ordering information device voltage option* marking and 2 1 package junction temperature range shipping ncp4515snxxt1 1.8 2.8 2.85 3.0 3.3 by bz b8 b3 b5 sot23 40 c to + 125 c 3000 tape & reel xx indicates output voltages *other output voltages are available. please contact on semiconductor for details.
ncp4515 http://onsemi.com 15 package dimensions sot23 sn suffix case 121201 issue o dim min max millimeters a1 0.00 0.10 a2 1.00 1.30 b 0.30 0.50 c 0.10 0.25 d 2.80 3.00 e 2.50 3.10 e1 1.50 1.80 e 0.95 bsc e1 1.90 bsc l l1 0.45 0.75 notes: 1. dimensions are in millimeters. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. datum c is a seating plane. a 1 5 23 4 d e1 b l1 e e e1 c m 0.10 c s b s a b 5x a2 a1 s 0.05 c l 0.20 ---
ncp4515 http://onsemi.com 16 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ncp4515/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

▲Up To Search▲

Price & Availability of NCP4515SN285T1

	To Download NCP4515SN285T1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .